SSL32F ssl33f ssl34f ssl35f ssl36f ssl38f ssl310f ssl315f ssl320f u n it ymbol s s urge overload rating to 80a peak cha racteristic c ase: smaf, molded plastic weight: 0.037 grams (approx.) guard ring die construction classification rating 94v-o ideally suited for automatic assembly for use in low voltage application 3.0 a surface mount low vf schottky barrier diode t ypical junction capacitance 0.45 0.50 0.60 0.85 v 3.0 a 14 21 28 35 42 56 70 105 140 v 20 30 40 50 60 80 100 150 200 v SSL32F ? ssl320f feat ures ! sc hottky barrier chip ! ! low power loss, high efficiency ! ! ! ! plastic case material has ul flammability m echanic al data ! ! te rminals: solder plated, solderable per mil-std-750, method 2026 ! polarity: cathode band or cathode notch ! marking: type number ! ! lead free: for rohs / lead free version m aximum r atings and electrical characteristics @t a =2 5 c unless otherwise specified p eak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rw m v r rm s reverse voltage v r( rm s) a v erage rectified output current @t l = 75 c i o non-repet itive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fs m 80 a forward vo ltage @i f = 3. 0a v fm p eak reverse current @t a = 25 c at rated dc blocking voltage @t a = 100 c i rm 0. 5 20 ma r jl r ja 28 88 c / w operat i ng t emperature range t j -65 t o +125 c s torage t e mperature range t st g -65 t o +150 c not e: 1. mounted on p.c. board with 5.0mm 2 c opper pad area. 1 of 2 SSL32F ? ssl320f t ypical thermal resistance (note 1) j c 110 30 110 pf z ibo seno electronic engineering co., ltd. www.senocn.com s m af 3.60 3.20 2.80 2.40 di m min max a b c d e f g a ll d imensions in mm 0.20 0.10 4.80 4.40 1.10 0.90 0.90 - 1.43 1.38 a b c d f e g a l l d a t a s h e e t
SSL32F ? ssl320f SSL32F ? ssl320f 0.01 0.1 1.0 10 0 0.4 0.8 1.2 i , inst a ntaneous forward current (a) f v , insta nt aneous fwd voltage (v) fig. 2 typ. forward characteristics f t - 25oc j i pulse w idth = 300 s f m 10 100 1000 0.1 1 10 100 c , junction cap acit ance (pf) j v , reverse volt age (v) fig. 4 typical junction capacitance r t = 25c f = 1 mhz j 0 20 40 60 80 100 120 140 i , instant aneous reverse current (ma) r percent of rated peak reverse voltage (%) fi g . 5 typical reverse characteristics t = 100oc j t = 75oc j t = 25oc j 100 10 1.0 0.1 0.01 0.001 2 of 2 z ibo seno electronic engineering co., ltd. www.senocn.com 0 20 40 60 80 10 0 11 01 0 0 i , pe ak forward surge current (a) f numbe r of cycles at 60 hz fi g . 3 m ax non-repetitive peak fwd sur g e cu rrent si ngl e ha lf-sine-wave (jedec method) t = 100c t 0 0.5 1.0 25 50 75 100 125 150 i average for w ard current (a) o, t , lead tempera ture ( c) fig. 1 forward current derating curve l 1.5 2.0 2.5 3.0 SSL32F- ssl34f ssl35f- ssl36f ssl38f- ssl310f ssl315f- ssl320f a l l d a t a s h e e t
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